Structured Silicon-based Thermal Emitter

Description

An optical radiation source produced from a disordered semiconductor material, such as black silicon, is provided. The optical radiation source includes a semiconductor substrate, a disordered semiconductor structure etched in the semiconductor substrate and a heating element disposed proximal to the disordered semiconductor structure and configured to heat the disordered semiconductor structure to a temperature at which the disordered semiconductor structure emits thermal infrared radiation.

Aspects

Aspects of the present disclosure relate in general to optical radiation sources, and in particular to silicon-based thermal emitters. Various aspects of the present disclosure provide an optical radiation source produced from disordered semiconductor material, such as black silicon. The optical radiation source includes a semiconductor substrate, a disordered semiconductor structure etched in the semiconductor substrate, and a heating element disposed proximal to the disordered semiconductor structure and configured to heat the disordered semiconductor structure to a temperature at which the disordered semiconductor structure emits thermal infrared radiation.

Patenting Status

Patent Granted

Status

Patented

Submit Your Intellectual Property Send Your Feedback