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Structured Silicon-based Thermal Emitter

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الوصف

An optical radiation source produced from a disordered semiconductor material, such as black silicon, is provided. The optical radiation source includes a semiconductor substrate, a disordered semiconductor structure etched in the semiconductor substrate and a heating element disposed proximal to the disordered semiconductor structure and configured to heat the disordered semiconductor structure to a temperature at which the disordered semiconductor structure emits thermal infrared radiation.

النواحي

Aspects of the present disclosure relate in general to optical radiation sources, and in particular to silicon-based thermal emitters. Various aspects of the present disclosure provide an optical radiation source produced from disordered semiconductor material, such as black silicon. The optical radiation source includes a semiconductor substrate, a disordered semiconductor structure etched in the semiconductor substrate, and a heating element disposed proximal to the disordered semiconductor structure and configured to heat the disordered semiconductor structure to a temperature at which the disordered semiconductor structure emits thermal infrared radiation.

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